Anti -Fero Magnetic tunnel junction under interface -controlled anti -control offers new route for General Spinronics

The Chinese Academy of Sciences, a research team led by Professor Shao Dangafo at the Institute of Solid Estate Physics, has unveiled a new method for achieving strong spin polarization, using the anti -ferrous magnetic metal interface.

Their results, published in Netonic Recently, suggest the third prototype of the Anti -Ferro Magnetic Tunnel Junction (AFMTJ), which pave the way for sharp and denser spinachonic devices.

Since electronics demand small size, high speed, and low energy use, aspirinics – is a strong alternative to traditional devices using both electron charges and spin. Magnetic tunnel junction (MTJS), a key spinrowonx technology, is already used in data storage, but they have facial limits due to the speed and unwanted magnetic fields from their ferocoral magnetic parts.

Anti -Ferro Magnetic (AFM) content avoids these problems. They have no pure magnetism, no wandering fields, and spin reactions, which are ideal for future devices. However, the current AFM tunnel junction depends on specific bulk properties, which greatly limit the material options.

In this research, the team dealt with this challenge, focusing on interface effects, which is often considered less. He discovered that by suppressing bulk effects, some AFM content, especially A-type antiferromagnets-smooth and stable interfaces, can display strong spin polarization, even if the material itself lacks bulk spin spinning states.

Using the modeling of first principles, the team designed a new AFMTJ containing two -dimensional A -Type AFM metal (Figate ₂) and one insulated BN barrier. Despite the nature of the fagty band structure, the main spin polarized stream emerged due to interface -powered effects. This mainstream remains stronger than the thickness of the electrode or the equality of the layer, confirming the origin of their interface.

Importantly, the junction exhibited the tunnel magnet (TMR) equivalent to about 100 % with traditional designs. From this point of view, the range of suitable suitable materials of spinronic devices is expanded, especially seeing that many AFM content can be tunked with the development directions and with A -type stacking.

Commenting on work, Professor Jose Lado (Alto University) and Professor Saroj PDish (Chalmers University of Technology) wrote together Netonic Interpretation: “Unprecedented interfaces in anti -ferrous magnets bring new opportunities for van der Walls heater structures, praising the theoretical progress and practical importance of the study.

This research not only challenges the long -standing belief that AFM is essential for spinachonic applications, but also based on high performance, interface engineered devices in the post -peacock period.