(A) The cross section of the Latimgulgau tunnel barrier, which shows uniform distribution of ingredients. (B) The use of this tunnel obstruction increases the magnetic anisopathy of the ferro magnetic layers. Credit: Heroki Skigawa, National Institute for Materials Science
A NIMS research team has developed a magnetic tunnel junction (MTJ), which has a tunnel obstruction that contains a high -tunnel -made tunnel containing multiple metallic elements. This MTJ simultaneously changed the magnetic, a high tunnel magnetic (TMR) ratio (ie, a relatively changed Change changes in power resistance when the magnetic direction of two pharo magnetic layers changed between parallel and antipyxical sentences) and low electrical resistance).
These features can help in the development of small, high capacity and high -performance hard disk drives (HDDS) and magnetic random access memory (MRAM).
This has been published in research Material today.
An MTJ – consists of a thin insulation layer (tunnel barrier), which has been sandwich between two ferro magnetic layers – operating the electrons by allowing tunnels through quantum tunnels. Magnesium oxide (MGO) is currently the most widely used tunnel content due to the ability to produce high TMR ratio, depending on the relative magnetic direction of the two ferro magnetic layers.
However, due to its high barrier height, the MGO suppresses the electron tunnel, which in turn increases the overall electrical resistance of the MTJ. To solve this problem, New New, there is a strong interest in creating obstacles to the new tunnel that maintain high TMR ratio by reducing the heights of obstacles, thus promoting the current of the tunnel.
Key results
The NIMS Research Team successfully promoted high quality lattoglogau-a high intosiside that contains five metal elements that are uniformly distributed at the atom level. An MTJ, which included a tunnel barrier made from this material, demonstrated a large standing magnetic anisotrosy, a TMR ratio more than 80 % and less than half of the MGO obstruction height.
These features increased the current tunnel and reduced the electronic resistance of MTJ. These achievements are expected to help develop the next generation of MRAMs and high -speed, high -capacity HDD.
The future point of view
In the next study, the research team aims to create barriers to the tunnel, which also improves both components and structural ratio of their ingredients with low resistance and high TMR ratio.
In addition, the team plans to promote more efficient and practical material design by employing machine learning and other data -driven techniques, thus plays a vital role in the development of high -efficiency, high -performance MRAM and HDD.
More information:
Rombing Razki Sehumbing Et E, Interface Standing Magnetic Anestroscopy with high antropic oxide epitaxial films and tunnels magnetic effect by spinnic applications, Material today (2025) DOI: 10.1016/J.Mattod.2025.06.025
Provided by the National Institute for Materials Science
Reference: Low resistance and high performance acquisition in magnetic tunnel junction using high intestinal oxides (2025, September 9) on September 9, 2025, https://phys.org/news/2025-09-09-09-09-09-09-09-09-html.
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