(Left) A traditional structure that runs a current from the outside of the magnet to create a rotation and run into the magnet. With the journey, some rotation explodes, and this spin loss reduces the maintenance of the magnet. The spin that escapes on the magnetic matter as if it is coming from the opposite direction, which produces a desired effect on itself. The higher the amount of spin is lost, the more power is used on the magnet, which makes it easier to replace magnetization. Credit: Korea Institute of Science and Technology (KIS)
A research team has developed a device principle that can use “spin loss”, which was previously considered as a simple loss, as a new source of magnetic control.
Work has appeared in the journal Nature communications.
Spantronics is a technology that uses electrons “spin” property to store and control information, and it uses next-generation information processing technologies such as ultra-flu-power memory, neuromorphic chips, and a low-use for stockstoxic computations, because it uses a low-powers for a low-powers. And it uses less power.
This research is important because it offers a new perspective that can significantly improve the performance of these spinning devices.
Dr. Dong So Han’s Research Team at the Korea Institute of Science and Technology (KIS) semiconductor Technology Research Center, Professional Jang Al Hong’s research teams in Digist and Professor Kyung-Hoon Kim’s research teams at the University of UNC, which allows them to change their physical trends.
Magnetic content is the key to the next generation of information processing devices that store or perform information by changing the direction of their internal magnetic. For example, if the direction of magnetization is upwards, it is recognized as 1, and if it is downward, it is recognized as 0, and the data can be stored or counted.
When the current is applied within a magnetic material, the structure that describes the new principle of the magnetization direction that rejects itself through the loss of spin. When the current flow occurs, the spin is produced inside the magnetic substance, and some spin on the right escapes the direction of the anti -ferrous magnet. Generally, this escape of spin is considered a “loss”, but in this study, this loss produces the same effect as the spin entering the magnetic material, which operates to overthrow the magnetic. In particular, as shown in the data, the more spin is lost, the more easier the magnetization switch is. In other words, it is easy to change magnetization. Credit: Korea Institute of Science and Technology (KIS)
Traditionally, to overthrow the direction of the magnet, a large current applies to force the electrons spin into the magnet. However, this process results in spin loss, where some spin does not reach the magnet and is eliminated, which is considered a major source of electricity and poor performance.
Researchers have focused on improving material design and processes to reduce spin loss. But now, the team has found that spin loss actually has the opposite effect, which changes magnetization. This means that the loss of the spin stimulates the magnetization switch inside the magnetic substance, just as the balloon moves as a reaction to exit.
In its experiments, the team contradicted that more than spin loss, needed less power to change magnetization. As a result, the energy efficiency is three times higher than the traditional methods, and can be felt without a special material or complicated device structure, making it extremely practical and industrially expanded.
A structure that describes a new principle through which magnetic material can change its magnetic direction through spin loss when a current passes through it. When the current flow occurs, the magnetic substances are created, and some rotate on the right side of the anti -ferrous magnet. Generally, escaping from this spin is considered ‘damage’, but in this study, this loss produces the same effect as the spin enters the magnetic material, and becomes a stimulant to change the magnetic itself. As shown in the left side data, when a pulse current is placed on the inner part of the magnet, some spin born inside the magnet ‘is lost’ from the adjacent anti -ferrous magnets, changes the direction of the magnet within the magnet. The direction of the magnetic reversal depends on the direction of the current pulse. Credit: Korea Institute of Science and Technology (KIS)
In addition, the technology adopts a simple device structure that is compatible with the current semiconductor process, making it highly highly possible, and it is also beneficial for manitorization and high integration. This enables applications in various fields, such as AI semiconductor, ultra -power memory, neuromorphic computing, and probable computing devices.
In particular, the development of AI and Age Computing LIGH high -performance computing devices is expected to be in full swing.
“So far, the field of spinix has focused only on reducing spin losses, but we have presented a new direction using the loss of magnetization as energy to transmit the loss of magnetization.”
“We intend to actively develop ultra-small and low-power AI semiconductor devices, as they can act as the basis of ultra-power computing technologies that are necessary in the AI ​​era.”
More information:
Switching Magnetization by Win Ying Chui Et E, Magnunic Spin Consumption, Nature communications (2025) DOI: 10.1038/s41467-025-61073-W.
Provided by the National Research Council of Science and Technology
Reference: Spin loss converts to energy: New principle can be derived from ultra-power devices (2025, August 25) on August 25, 2025, https://phys.org/news/2025-08-lospy-princenceple-ltra.html.
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